Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence - researchr publication related

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F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J. L. Trolet, M. Piccione, C. Gaquière. Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. Microelectronics Reliability, 52(9-10):2159-2163, 2012. [doi]

The following publications are possibly variants of this publication:

Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTsS. Petitdidier, F. Berthet, Y. Guhel, Jean-Lionel Trolet, P. Mary, Christophe Gaquière, Bertrand Boudart. mr, 55(9-10):1719-1723, 2015. [doi]

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