Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs

S. Petitdidier, F. Berthet, Y. Guhel, Jean-Lionel Trolet, P. Mary, Christophe Gaquière, Bertrand Boudart. Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectronics Reliability, 55(9-10):1719-1723, 2015. [doi]

Abstract

Abstract is missing.