Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

S. Petitdidier, F. Berthet, Y. Guhel, Jean-Lionel Trolet, P. Mary, Christophe Gaquière, Bertrand Boudart. Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectronics Reliability, 55(9-10):1719-1723, 2015. [doi]

This author has not been identified. Look up 'S. Petitdidier' in GoogleThis author has not been identified. Look up 'F. Berthet' in GoogleThis author has not been identified. Look up 'Y. Guhel' in GoogleThis author has not been identified. Look up 'Jean-Lionel Trolet' in GoogleThis author has not been identified. Look up 'P. Mary' in GoogleThis author has not been identified. Look up 'Christophe Gaquière' in GoogleThis author has not been identified. Look up 'Bertrand Boudart' in Google

runs on WebDSL