S. Bhattacharjee, K. L. Ganapathi, S. Mohan, N. Bhat. High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]
@inproceedings{BhattacharjeeGM18,
title = {High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts},
author = {S. Bhattacharjee and K. L. Ganapathi and S. Mohan and N. Bhat},
year = {2018},
doi = {10.1109/DRC.2018.8442194},
url = {https://doi.org/10.1109/DRC.2018.8442194},
researchr = {https://researchr.org/publication/BhattacharjeeGM18},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
publisher = {IEEE},
isbn = {978-1-5386-3028-0},
}