T. K. Bhattacharyya, Anandaroop Ghosh. Behavioral Modeling of a CMOS Compatible High Precision MEMS Based Electron Tunneling Accelerometer. In 21st International Conference on VLSI Design (VLSI Design 2008), 4-8 January 2008, Hyderabad, India. pages 595-600, IEEE Computer Society, 2008. [doi]
@inproceedings{BhattacharyyaG08,
title = {Behavioral Modeling of a CMOS Compatible High Precision MEMS Based Electron Tunneling Accelerometer},
author = {T. K. Bhattacharyya and Anandaroop Ghosh},
year = {2008},
doi = {10.1109/VLSI.2008.60},
url = {http://doi.ieeecomputersociety.org/10.1109/VLSI.2008.60},
tags = {modeling},
researchr = {https://researchr.org/publication/BhattacharyyaG08},
cites = {0},
citedby = {0},
pages = {595-600},
booktitle = {21st International Conference on VLSI Design (VLSI Design 2008), 4-8 January 2008, Hyderabad, India},
publisher = {IEEE Computer Society},
}