Charged based MOS transistor modeling in weak inversion - researchr publication authors

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Tamkeen M. Bhatti, F. A. Bhatti. Charged based MOS transistor modeling in weak inversion. In 2008 IEEE International Conference on Electro/Information Technology, EIT 2008, held at Iowa State University, Ames, Iowa, USA, May 18-20, 2008. pages 294-299, IEEE, 2008. [doi]

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