Tamkeen M. Bhatti, F. A. Bhatti. Charged based MOS transistor modeling in weak inversion. In 2008 IEEE International Conference on Electro/Information Technology, EIT 2008, held at Iowa State University, Ames, Iowa, USA, May 18-20, 2008. pages 294-299, IEEE, 2008. [doi]
@inproceedings{BhattiB08,
title = {Charged based MOS transistor modeling in weak inversion},
author = {Tamkeen M. Bhatti and F. A. Bhatti},
year = {2008},
doi = {10.1109/EIT.2008.4554317},
url = {http://dx.doi.org/10.1109/EIT.2008.4554317},
tags = {rule-based, modeling},
researchr = {https://researchr.org/publication/BhattiB08},
cites = {0},
citedby = {0},
pages = {294-299},
booktitle = {2008 IEEE International Conference on Electro/Information Technology, EIT 2008, held at Iowa State University, Ames, Iowa, USA, May 18-20, 2008},
publisher = {IEEE},
isbn = {978-1-4244-2030-8},
}