Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors - researchr publication authors

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D. Bisi, Matteo Meneghini, A. Stocco, G. Cibin, A. Pantellini, A. Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso. Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 61-64, IEEE, 2013. [doi]

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