D. Bisi, Matteo Meneghini, A. Stocco, G. Cibin, A. Pantellini, A. Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso. Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 61-64, IEEE, 2013. [doi]
@inproceedings{BisiMSCPNLZM13,
title = {Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors},
author = {D. Bisi and Matteo Meneghini and A. Stocco and G. Cibin and A. Pantellini and A. Nanni and Claudio Lanzieri and Enrico Zanoni and Gaudenzio Meneghesso},
year = {2013},
doi = {10.1109/ESSDERC.2013.6818819},
url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818819},
researchr = {https://researchr.org/publication/BisiMSCPNLZM13},
cites = {0},
citedby = {0},
pages = {61-64},
booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
publisher = {IEEE},
}