Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method

M. Blaho, Dionyz Pogany, E. Gornik, M. Denison, G. Groos, M. Stecher. Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. Microelectronics Reliability, 43(4):545-548, 2003. [doi]

@article{BlahoPGDGS03,
  title = {Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method},
  author = {M. Blaho and Dionyz Pogany and E. Gornik and M. Denison and G. Groos and M. Stecher},
  year = {2003},
  doi = {10.1016/S0026-2714(03)00021-0},
  url = {http://dx.doi.org/10.1016/S0026-2714(03)00021-0},
  researchr = {https://researchr.org/publication/BlahoPGDGS03},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {43},
  number = {4},
  pages = {545-548},
}