Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection

Stephane Blin, Lucie Tohme, Dominique Coquillat, Shogo Horiguchi, Yusuke Minamikata, Shintaro Hisatake, Philippe Nouvel, Thomas Cohen, Annick Penarier, Fabrice Cano, Luca Varani, Wojciech Knap, Tadao Nagatsuma. Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection. Journal of Communications and Networks, 15(6):559-568, 2013. [doi]

Abstract

Abstract is missing.