Analog IC Design in Ultra-Thin Oxide CMOS Technologies With Significant Direct Tunneling-Induced Gate Current

Eric Bohannon, Clyde Washburn, Ponnathpur R. Mukund. Analog IC Design in Ultra-Thin Oxide CMOS Technologies With Significant Direct Tunneling-Induced Gate Current. IEEE Trans. on Circuits and Systems, 58-I(4):645-653, 2011. [doi]

@article{BohannonWM11,
  title = {Analog IC Design in Ultra-Thin Oxide CMOS Technologies With Significant Direct Tunneling-Induced Gate Current},
  author = {Eric Bohannon and Clyde Washburn and Ponnathpur R. Mukund},
  year = {2011},
  doi = {10.1109/TCSI.2010.2089550},
  url = {http://dx.doi.org/10.1109/TCSI.2010.2089550},
  researchr = {https://researchr.org/publication/BohannonWM11},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. on Circuits and Systems},
  volume = {58-I},
  number = {4},
  pages = {645-653},
}