Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

M. Bouarroudj, Zoubir Khatir, J. P. Ousten, F. Badel, L. Dupont, Stéphane Lefebvre. Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. Microelectronics Reliability, 47(9-11):1719-1724, 2007. [doi]

@article{BouarroudjKOBDL07,
  title = {Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions},
  author = {M. Bouarroudj and Zoubir Khatir and J. P. Ousten and F. Badel and L. Dupont and Stéphane Lefebvre},
  year = {2007},
  doi = {10.1016/j.microrel.2007.07.027},
  url = {http://dx.doi.org/10.1016/j.microrel.2007.07.027},
  tags = {meta-model, Meta-Environment, meta-objects},
  researchr = {https://researchr.org/publication/BouarroudjKOBDL07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {47},
  number = {9-11},
  pages = {1719-1724},
}