Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions - researchr publication

researchr

You are not signed in
Sign in
Sign up

M. Bouarroudj, Zoubir Khatir, J. P. Ousten, F. Badel, L. Dupont, Stéphane Lefebvre. Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. Microelectronics Reliability, 47(9-11):1719-1724, 2007. [doi]

Abstract is missing.

runs on WebDSL