Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications

M. L. Bourqui, L. Béchou, Olivier Gilard, Y. Deshayes, P. Del Vecchio, L. S. How, F. Rosala, Y. Ousten, A. Touboul. Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. Microelectronics Reliability, 48(8-9):1202-1207, 2008. [doi]

Authors

M. L. Bourqui

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L. Béchou

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Olivier Gilard

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Y. Deshayes

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P. Del Vecchio

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L. S. How

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F. Rosala

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Y. Ousten

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A. Touboul

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