Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications

M. L. Bourqui, L. Béchou, Olivier Gilard, Y. Deshayes, P. Del Vecchio, L. S. How, F. Rosala, Y. Ousten, A. Touboul. Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. Microelectronics Reliability, 48(8-9):1202-1207, 2008. [doi]

@article{BourquiBGDVHROT08,
  title = {Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications},
  author = {M. L. Bourqui and L. Béchou and Olivier Gilard and Y. Deshayes and P. Del Vecchio and L. S. How and F. Rosala and Y. Ousten and A. Touboul},
  year = {2008},
  doi = {10.1016/j.microrel.2008.07.012},
  url = {http://dx.doi.org/10.1016/j.microrel.2008.07.012},
  tags = {reliability},
  researchr = {https://researchr.org/publication/BourquiBGDVHROT08},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {48},
  number = {8-9},
  pages = {1202-1207},
}