Strong electron irradiation hardness of 852 nm Al-free laser diodes

M. Boutillier, O. Gauthier-Lafaye, S. Bonnefont, F. Lozes-Dupuy, F.-J. Vermersch, M. Krakowski, O. Gilard. Strong electron irradiation hardness of 852 nm Al-free laser diodes. Microelectronics Reliability, 46(9-11):1715-1719, 2006. [doi]

Authors

M. Boutillier

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O. Gauthier-Lafaye

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S. Bonnefont

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F. Lozes-Dupuy

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F.-J. Vermersch

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M. Krakowski

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O. Gilard

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