A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications

Thomas Bücher, Janusz Grzyb, Philipp Hillger, Holger Rücker, Bernd Heinemann, Ullrich R. Pfeiffer. A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications. In 47th ESSCIRC 2021 - European Solid State Circuits Conference, ESSCIR 2021, Grenoble, France, September 13-22, 2021. pages 369-372, IEEE, 2021. [doi]

@inproceedings{BucherGHRHP21,
  title = {A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications},
  author = {Thomas Bücher and Janusz Grzyb and Philipp Hillger and Holger Rücker and Bernd Heinemann and Ullrich R. Pfeiffer},
  year = {2021},
  doi = {10.1109/ESSCIRC53450.2021.9567853},
  url = {https://doi.org/10.1109/ESSCIRC53450.2021.9567853},
  researchr = {https://researchr.org/publication/BucherGHRHP21},
  cites = {0},
  citedby = {0},
  pages = {369-372},
  booktitle = {47th ESSCIRC 2021 - European Solid State Circuits Conference, ESSCIR 2021, Grenoble, France, September 13-22, 2021},
  publisher = {IEEE},
  isbn = {978-1-6654-3751-6},
}