A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs

Rajat Butola, Yiming Li, Sekhar Reddy Kola. A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs. IEEE Access, 10:71356-71369, 2022. [doi]

Abstract

Abstract is missing.