Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker. Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-5, IEEE, 2019. [doi]

This author has not been identified. Look up 'Yutao Cai' in GoogleThis author has not been identified. Look up 'Yang Wang' in GoogleThis author has not been identified. Look up 'Miao Cui' in GoogleThis author has not been identified. Look up 'Wen Liu' in GoogleThis author has not been identified. Look up 'Huiqing Wen' in GoogleThis author has not been identified. Look up 'Cezhou Zhao' in GoogleThis author has not been identified. Look up 'Ivona Z. Mitrovic' in GoogleThis author has not been identified. Look up 'Stephen Taylor' in GoogleThis author has not been identified. Look up 'Paul R. Chalker' in Google

runs on WebDSL