Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker. Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-5, IEEE, 2019. [doi]
@inproceedings{CaiWCLWZMTC19,
title = {Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices},
author = {Yutao Cai and Yang Wang and Miao Cui and Wen Liu and Huiqing Wen and Cezhou Zhao and Ivona Z. Mitrovic and Stephen Taylor and Paul R. Chalker},
year = {2019},
doi = {10.1109/ICICDT.2019.8790844},
url = {https://doi.org/10.1109/ICICDT.2019.8790844},
researchr = {https://researchr.org/publication/CaiWCLWZMTC19},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019},
publisher = {IEEE},
isbn = {978-1-7281-1853-6},
}