A radiation hardened 512 kbit SRAM in 180 nm CMOS technology

Cristiano Calligaro, Valentino Liberali, Alberto Stabile. A radiation hardened 512 kbit SRAM in 180 nm CMOS technology. In 16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, Yasmine Hammamet, Tunesia, 13-19 December, 2009. pages 655-658, IEEE, 2009. [doi]

Authors

Cristiano Calligaro

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Valentino Liberali

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Alberto Stabile

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