Cristiano Calligaro, Valentino Liberali, Alberto Stabile. A radiation hardened 512 kbit SRAM in 180 nm CMOS technology. In 16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, Yasmine Hammamet, Tunesia, 13-19 December, 2009. pages 655-658, IEEE, 2009. [doi]
@inproceedings{CalligaroLS09,
title = {A radiation hardened 512 kbit SRAM in 180 nm CMOS technology},
author = {Cristiano Calligaro and Valentino Liberali and Alberto Stabile},
year = {2009},
doi = {10.1109/ICECS.2009.5410804},
url = {http://dx.doi.org/10.1109/ICECS.2009.5410804},
researchr = {https://researchr.org/publication/CalligaroLS09},
cites = {0},
citedby = {0},
pages = {655-658},
booktitle = {16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, Yasmine Hammamet, Tunesia, 13-19 December, 2009},
publisher = {IEEE},
isbn = {978-1-4244-5090-9},
}