Switching trajectory improvement of SiC MOSFET devices using a feedback gate driver

Alejandro Paredes Camacho, Efrén Fernandez, Vicent Sala, Hamidreza Ghorbani, Jose Luis Romeral. Switching trajectory improvement of SiC MOSFET devices using a feedback gate driver. In IEEE International Conference on Industrial Technology, ICIT 2018, Lyon, France, February 20-22, 2018. pages 847-852, IEEE, 2018. [doi]

Abstract

Abstract is missing.