TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies

Ramon Canal, Antonio Rubio, A. Asenov, A. Brown, Miguel Miranda, Paul Zuber, Antonio González, Xavier Vera. TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies. Procedia CS, 7:148-149, 2011. [doi]

@article{CanalRABMZGV11,
  title = {TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies},
  author = {Ramon Canal and Antonio Rubio and A. Asenov and A. Brown and Miguel Miranda and Paul Zuber and Antonio González and Xavier Vera},
  year = {2011},
  doi = {10.1016/j.procs.2011.09.010},
  url = {http://dx.doi.org/10.1016/j.procs.2011.09.010},
  researchr = {https://researchr.org/publication/CanalRABMZGV11},
  cites = {0},
  citedby = {0},
  journal = {Procedia CS},
  volume = {7},
  pages = {148-149},
}