10T and 8T Full Adders Based on Ambipolar XOR Gates with SB-FinFETs

Talha Furkan Canan, Savas Kaya, Avinash Kodi, Hao Xin, Ahmed Louri. 10T and 8T Full Adders Based on Ambipolar XOR Gates with SB-FinFETs. In 25th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2018, Bordeaux, France, December 9-12, 2018. pages 577-580, IEEE, 2018. [doi]

@inproceedings{CananKKXL18,
  title = {10T and 8T Full Adders Based on Ambipolar XOR Gates with SB-FinFETs},
  author = {Talha Furkan Canan and Savas Kaya and Avinash Kodi and Hao Xin and Ahmed Louri},
  year = {2018},
  doi = {10.1109/ICECS.2018.8617893},
  url = {https://doi.org/10.1109/ICECS.2018.8617893},
  researchr = {https://researchr.org/publication/CananKKXL18},
  cites = {0},
  citedby = {0},
  pages = {577-580},
  booktitle = {25th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2018, Bordeaux, France, December 9-12, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-9562-3},
}