Panglijen Candra, Tian Xia. SiGe HBT X-band and Ka-band switchable dual-band low noise amplifier. In IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016. pages 722-725, IEEE, 2016. [doi]
@inproceedings{CandraX16, title = {SiGe HBT X-band and Ka-band switchable dual-band low noise amplifier}, author = {Panglijen Candra and Tian Xia}, year = {2016}, doi = {10.1109/ISCAS.2016.7527342}, url = {http://dx.doi.org/10.1109/ISCAS.2016.7527342}, researchr = {https://researchr.org/publication/CandraX16}, cites = {0}, citedby = {0}, pages = {722-725}, booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016}, publisher = {IEEE}, isbn = {978-1-4799-5341-7}, }