The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode - researchr publication authors

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Jie Cao, Yu Wu, Yueyang Liu, Xintian Zhou, Lihao Wang, Meng Liu, Lei Sun. The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode. In EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020 - 8 November, 2020. pages 1060-1064, ACM, 2020. [doi]

This author has not been identified. Look up 'Jie Cao' in GoogleThis author has not been identified. Look up 'Yu Wu' in GoogleThis author has not been identified. Look up 'Yueyang Liu' in GoogleThis author has not been identified. Look up 'Xintian Zhou' in GoogleThis author has not been identified. Look up 'Lihao Wang' in GoogleThis author has not been identified. Look up 'Meng Liu' in GoogleThis author has not been identified. Look up 'Lei Sun' in Google

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