The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode

Jie Cao, Yu Wu, Yueyang Liu, Xintian Zhou, Lihao Wang, Meng Liu, Lei Sun. The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode. In EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020 - 8 November, 2020. pages 1060-1064, ACM, 2020. [doi]

Abstract

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