Simulation of Proton Induced Single Event Upsets in Bulk Nano-CMOS SRAMs - researchr publication authors

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Xuebing Cao, Liyi Xiao, Linzhe Li, Jie Li, Tianqi Wang. Simulation of Proton Induced Single Event Upsets in Bulk Nano-CMOS SRAMs. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-4, IEEE, 2019. [doi]

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