Xuebing Cao, Liyi Xiao, Linzhe Li, Jie Li, Tianqi Wang. Simulation of Proton Induced Single Event Upsets in Bulk Nano-CMOS SRAMs. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{CaoXLLW19,
title = {Simulation of Proton Induced Single Event Upsets in Bulk Nano-CMOS SRAMs},
author = {Xuebing Cao and Liyi Xiao and Linzhe Li and Jie Li and Tianqi Wang},
year = {2019},
doi = {10.1109/ICICDT.2019.8790935},
url = {https://doi.org/10.1109/ICICDT.2019.8790935},
researchr = {https://researchr.org/publication/CaoXLLW19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019},
publisher = {IEEE},
isbn = {978-1-7281-1853-6},
}