Examination and evaluation of La::2::O::3:: as gate dielectric for sub-100nm CMOS and DRAM technology

V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele. Examination and evaluation of La::2::O::3:: as gate dielectric for sub-100nm CMOS and DRAM technology. Microelectronics Reliability, 45(5-6):937-940, 2005. [doi]

Abstract

Abstract is missing.