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Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

Hamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk. Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 118-119, IEEE, 2014. [doi]

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Hamilton Carrillo-Nunez

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Mathieu Luisier

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Andreas Schenk

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