2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods

José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi-Wang Shu. 2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods. J. Comput. Physics, 214(1):55-80, 2006. [doi]

@article{CarrilloGMS06,
  title = {2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods},
  author = {José A. Carrillo and Irene M. Gamba and Armando Majorana and Chi-Wang Shu},
  year = {2006},
  doi = {10.1016/j.jcp.2005.09.005},
  url = {http://dx.doi.org/10.1016/j.jcp.2005.09.005},
  researchr = {https://researchr.org/publication/CarrilloGMS06},
  cites = {0},
  citedby = {0},
  journal = {J. Comput. Physics},
  volume = {214},
  number = {1},
  pages = {55-80},
}