2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods

José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi-Wang Shu. 2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods. J. Comput. Physics, 214(1):55-80, 2006. [doi]

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