A correction code for multiple cells upsets in memory devices for space applications - researchr publication authors

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Helano de S. Castro, Jarbas A. N. da Silveira, Alexandre A. P. Coelho, Felipe G. A. e Silva, Philippe de S. Magalhaes, Otavio A. de Lima. A correction code for multiple cells upsets in memory devices for space applications. In 14th IEEE International New Circuits and Systems Conference, NEWCAS 2016, Vancouver, BC, Canada, June 26-29, 2016. pages 1-4, IEEE, 2016. [doi]

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