Antonio Cerdeira, Magali Estrada, B. S. Soto-Cruz, Benjamín Iñíguez. Modeling the behavior of amorphous oxide thin film transistors before and after bias stress. Microelectronics Reliability, 52(11):2532-2536, 2012. [doi]
@article{CerdeiraESI12,
title = {Modeling the behavior of amorphous oxide thin film transistors before and after bias stress},
author = {Antonio Cerdeira and Magali Estrada and B. S. Soto-Cruz and Benjamín Iñíguez},
year = {2012},
doi = {10.1016/j.microrel.2012.04.017},
url = {http://dx.doi.org/10.1016/j.microrel.2012.04.017},
researchr = {https://researchr.org/publication/CerdeiraESI12},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {52},
number = {11},
pages = {2532-2536},
}