The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system

Soonyoung Cha, Dae-Hyun Kim, Taizhi Liu, Linda S. Milor. The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system. Microelectronics Reliability, 55(9-10):1404-1411, 2015. [doi]

@article{ChaKLM15,
  title = {The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system},
  author = {Soonyoung Cha and Dae-Hyun Kim and Taizhi Liu and Linda S. Milor},
  year = {2015},
  doi = {10.1016/j.microrel.2015.06.105},
  url = {http://dx.doi.org/10.1016/j.microrel.2015.06.105},
  researchr = {https://researchr.org/publication/ChaKLM15},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {55},
  number = {9-10},
  pages = {1404-1411},
}