A 4nm 1.15TB/s HBM3 Interface with Resistor-Tuned Offset-Calibration and In-Situ Margin-Detection

Kwanyeob Chae, Jiyeon Park, Jaegeun Song, Billy Koo, Jihun Oh, Shinyoung Yi, Won Lee, Dongha Kim, Taekyung Yeo, Kyeongkeun Kang, Sangsoo Park, Eunsu Kim, Sukhyun Jung, Sanghune Park, Sungcheol Park, Mijung Noh, Hyo-Gyuem Rhew, Jongshin Shin. A 4nm 1.15TB/s HBM3 Interface with Resistor-Tuned Offset-Calibration and In-Situ Margin-Detection. In IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023. pages 406-407, IEEE, 2023. [doi]

@inproceedings{ChaePSKOYLKYKPKJPPNRS23,
  title = {A 4nm 1.15TB/s HBM3 Interface with Resistor-Tuned Offset-Calibration and In-Situ Margin-Detection},
  author = {Kwanyeob Chae and Jiyeon Park and Jaegeun Song and Billy Koo and Jihun Oh and Shinyoung Yi and Won Lee and Dongha Kim and Taekyung Yeo and Kyeongkeun Kang and Sangsoo Park and Eunsu Kim and Sukhyun Jung and Sanghune Park and Sungcheol Park and Mijung Noh and Hyo-Gyuem Rhew and Jongshin Shin},
  year = {2023},
  doi = {10.1109/ISSCC42615.2023.10067736},
  url = {https://doi.org/10.1109/ISSCC42615.2023.10067736},
  researchr = {https://researchr.org/publication/ChaePSKOYLKYKPKJPPNRS23},
  cites = {0},
  citedby = {0},
  pages = {406-407},
  booktitle = {IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-9016-0},
}