Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top Electrode

Hui-Ping Chang, Deji Akinwande, Jean Anne C. Incorvia. Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top Electrode. In Device Research Conference, DRC 2024, College Park, MD, USA, June 24-26, 2024. pages 1-2, IEEE, 2024. [doi]

@inproceedings{ChangAI24,
  title = {Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top Electrode},
  author = {Hui-Ping Chang and Deji Akinwande and Jean Anne C. Incorvia},
  year = {2024},
  doi = {10.1109/DRC61706.2024.10605323},
  url = {https://doi.org/10.1109/DRC61706.2024.10605323},
  researchr = {https://researchr.org/publication/ChangAI24},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {Device Research Conference, DRC 2024, College Park, MD, USA, June 24-26, 2024},
  publisher = {IEEE},
  isbn = {979-8-3503-7373-8},
}