A Compact-Area Low-VDDmin 6T SRAM With Improvement in Cell Stability, Read Speed, and Write Margin Using a Dual-Split-Control-Assist Scheme

Meng-Fan Chang, Chien-Fu Chen, Ting-Hao Chang, Chi-Chang Shuai, Yen-Yao Wang, Yi-Ju Chen, Hiroyuki Yamauchi. A Compact-Area Low-VDDmin 6T SRAM With Improvement in Cell Stability, Read Speed, and Write Margin Using a Dual-Split-Control-Assist Scheme. J. Solid-State Circuits, 52(9):2498-2514, 2017. [doi]

@article{ChangCCSWCY17,
  title = {A Compact-Area Low-VDDmin 6T SRAM With Improvement in Cell Stability, Read Speed, and Write Margin Using a Dual-Split-Control-Assist Scheme},
  author = {Meng-Fan Chang and Chien-Fu Chen and Ting-Hao Chang and Chi-Chang Shuai and Yen-Yao Wang and Yi-Ju Chen and Hiroyuki Yamauchi},
  year = {2017},
  doi = {10.1109/JSSC.2017.2701547},
  url = {https://doi.org/10.1109/JSSC.2017.2701547},
  researchr = {https://researchr.org/publication/ChangCCSWCY17},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {52},
  number = {9},
  pages = {2498-2514},
}