Seung-Ho Chang, Sok-Kyu Lee, Seong Je Park, Min-Joong Jung, Jung-Chul Han, In-Soo Wang, Kyu-Hee Lim, Jung Hwan Lee, Ji-Hwan Kim, Won-Kyung Kang, Tai-Kyu Kang, Hee-Su Byun, Yujong Noh, Lee-Hyun Kwon, Bon-Kwang Koo, Myung Cho, Joong-Seob Yang, Yo-Hwan Koh. A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughput. In IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009. pages 240-241, IEEE, 2009. [doi]
@inproceedings{ChangLPJHWLLKKKBNKKCYK09,
title = {A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughput},
author = {Seung-Ho Chang and Sok-Kyu Lee and Seong Je Park and Min-Joong Jung and Jung-Chul Han and In-Soo Wang and Kyu-Hee Lim and Jung Hwan Lee and Ji-Hwan Kim and Won-Kyung Kang and Tai-Kyu Kang and Hee-Su Byun and Yujong Noh and Lee-Hyun Kwon and Bon-Kwang Koo and Myung Cho and Joong-Seob Yang and Yo-Hwan Koh},
year = {2009},
doi = {10.1109/ISSCC.2009.4977397},
url = {http://dx.doi.org/10.1109/ISSCC.2009.4977397},
researchr = {https://researchr.org/publication/ChangLPJHWLLKKKBNKKCYK09},
cites = {0},
citedby = {0},
pages = {240-241},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009},
publisher = {IEEE},
isbn = {978-1-4244-3458-9},
}