Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base

Yang-Hua Chang, Rong-Hao Syu. Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base. Microelectronics Reliability, 50(1):70-74, 2010. [doi]

Abstract

Abstract is missing.