An improved QPZD Ids, GV model for 0.1μm AlGaN/GaN HEMTs Process - researchr publication authors

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Chen Chang, Guiqiang Zhu, Yuehang Xu, Yuqing Guo, Fujiang Lin. An improved QPZD Ids, GV model for 0.1μm AlGaN/GaN HEMTs Process. In 2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020, Nanjing, China, November 23-25, 2020. pages 98-99, IEEE, 2020. [doi]

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