An improved QPZD Ids, GV model for 0.1μm AlGaN/GaN HEMTs Process

Chen Chang, Guiqiang Zhu, Yuehang Xu, Yuqing Guo, Fujiang Lin. An improved QPZD Ids, GV model for 0.1μm AlGaN/GaN HEMTs Process. In 2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020, Nanjing, China, November 23-25, 2020. pages 98-99, IEEE, 2020. [doi]

@inproceedings{ChangZXGL20,
  title = {An improved QPZD Ids, GV model for 0.1μm AlGaN/GaN HEMTs Process},
  author = {Chen Chang and Guiqiang Zhu and Yuehang Xu and Yuqing Guo and Fujiang Lin},
  year = {2020},
  doi = {10.1109/ICTA50426.2020.9332038},
  url = {https://doi.org/10.1109/ICTA50426.2020.9332038},
  researchr = {https://researchr.org/publication/ChangZXGL20},
  cites = {0},
  citedby = {0},
  pages = {98-99},
  booktitle = {2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020, Nanjing, China, November 23-25, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-8032-8},
}