Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli. Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method. IEEE Access, 9:109745-109753, 2021. [doi]

Abstract

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