Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield pattern

C. Q. Chen, G. B. Ang, P. T. Ng, Francis Rivai, S. P. Neo, D. Nagalingam, K. H. Yip, Jeffery Lam, Z. H. Mai. Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield pattern. Microelectronics Reliability, 76:141-144, 2017. [doi]

Abstract

Abstract is missing.