A double auxiliary gate SiC trench MOSFET with dynamic P-well control and integrated MOS-channel diode

Weizhong Chen, Zesheng Chen, Zhijie Deng, Yufan Xiao, Haishi Wang. A double auxiliary gate SiC trench MOSFET with dynamic P-well control and integrated MOS-channel diode. Microelectronics Journal, 165:106821, 2025. [doi]

@article{ChenCDXW25,
  title = {A double auxiliary gate SiC trench MOSFET with dynamic P-well control and integrated MOS-channel diode},
  author = {Weizhong Chen and Zesheng Chen and Zhijie Deng and Yufan Xiao and Haishi Wang},
  year = {2025},
  doi = {10.1016/j.mejo.2025.106821},
  url = {https://doi.org/10.1016/j.mejo.2025.106821},
  researchr = {https://researchr.org/publication/ChenCDXW25},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {165},
  pages = {106821},
}