Anti-ESD impacts on 60-V P-channel LDMOS devices as none-ODs zone inserting in the bulk region

Shen-Li Chen, Shawn Chang, Yu-Ting Huang, Shun-Bao Chang. Anti-ESD impacts on 60-V P-channel LDMOS devices as none-ODs zone inserting in the bulk region. In IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015, Taipei, Taiwan, June 6-8, 2015. pages 266-267, IEEE, 2015. [doi]

Abstract

Abstract is missing.