Write and Read Channel Models for 1S1R Crossbar Resistive Memory with High Line Resistance

Zehui Chen, Lara Dolecek. Write and Read Channel Models for 1S1R Crossbar Resistive Memory with High Line Resistance. In IEEE Global Communications Conference, GLOBECOM 2020, Virtual Event, Taiwan, December 7-11, 2020. pages 1-7, IEEE, 2020. [doi]

Abstract

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